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SEMICONDUCTOR
TECHNICAL DATA
BF421
SILICON PNP TRIPLE DIFFUSED TYPE
Revision No : 3
HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION.
COLOR TV CHROMA OUTPUT APPLICATIONS.
FEATURES
High Voltage : V
CEO
>-300V
Complementary to BF420.
MAXIMUM RATING (Ta=25 )
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-200V, I
E
=0
-
-
-10
nA
V
CB
=-200V, I
E
=0, Tj=150
-
-
-10
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-50
nA
DC Current Gain
h
FE
V
CE
=-20V, I
C
=-25mA
50
-
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-30mA, I
B
=-5mA
-
-
-0.6
V
Base-Emitter Voltage
V
BE
V
CE
=-20V, I
C
=-25mA
-
-0.75
-
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-10mA
60
-
-
MHz
Reverse Transfer Capacitance
C
re
V
CB
=-30V, I
E
=0, f=1MHz
-
-
1.6
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-50
mA
Peak
I
CP
-100
Collector Power Dissipation
P
C
625
mW
Base Current
I
B
-50
mA
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-65 150
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BF421
Revision No : 3
0
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V (LOW VOLTAGE REGION)
0
COLLECTOR CURRENT I (mA)
C
0
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
10
DC CURRENT GAIN h
FE
-3
-10
-1
-0.3
COLLECTOR CURRENT I (mA)
C
h - I
CE(sat)
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
C
V - I
-4
-8
-12
-16
-20
-24
-28
-10
-20
-30
-40
-50
-60
COMMON
EMITTER
1.6 1.0 0.6
0.4
0.3
0.2
0.15
I =0.05mA
0
B
0.1
FE
C
-30
-100
5
30
50
100
300
500
C
COLLECTOR CURRENT I (mA)
C
FE
h - I
-0.3
5
DC CURRENT GAIN h
FE
100
10
50
30
300
500
-1
-3
-10
-100
-30
COMMON EMITTER
Ta=25 C
V =-20V
-10
-5
CE
COMMON EMITTER
V =-10V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
CE(sat)
C
VOLTAGE V (V)
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-10
-20
-30
-40
-50
COMMON EMITTER
V =10V
CE
Ta=100 C
Ta=25
C
Ta=-25 C
3.0
Ta=25 C
-10
-0.3
-0.05
-0.1
-0.5
-0.3
-1
-5
-3
-1
-3
COMMON EMITTER
Ta=25 C
-30
-100
I /I =10
C B
5
2
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATION
C
COLLECTOR CURRENT I (mA)
CE(sat)
-0.05
-0.3
-0.1
-0.5
-0.3
-1
-1
-3
-10
-100
-30
I /I =5
COMMON EMITTER
-5
-3
CE(sat)
V - I
C
C B
Ta=100 C
25
-25
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BF421
Revision No : 3
C
P (mW)
COLLECTOR POWER DISSIPATION
COLLECTOR OUTPUT CAPACITANCE C (pF)
ob
COLLECTOR-BASE VOLTAGE V (V)
CB
TRANSITION FREQUENCY f (MHz)
T
COLLECTOR CURRENT I (mA)
C
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
C
CE
re
REVERSE TRANSFER CAPACITANCE C (pF)
1000
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
I MAX.(PULSED)
I MAX.(CONTINUOUS)
DC OPERATION
COMMON EMITTER
0
0
0
re
ob
C .C - V
-3
-10
-1
-0.3
0
C
P - Ta
f - I
-3
-10
SAFE OPERATING AREA
CB
-40
-80
-120 -160 -200 -240 -280
2
4
6
8
10
I =0
f=1MHz
Ta=25 C
E
C
ob
C
re
40
80
120
160
200
200
400
600
800
-30
-100
-300
-0.5
-1
-3
-5
-10
-30
-50
-100
-200
*
C
C
*
100ms
10ms
1ms
*
*
*
T
C
-30
10
30
50
100
300
500
Ta=25 C
V =-20V
CE
V =-10V
CE
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